| PART |
Description |
Maker |
| TE28F320S3-100 TE28F320S3-120 TE28F160S3-100 TE28F |
WORD-WIDE FlashFile MEMORY FAMILY
|
INTEL[Intel Corporation]
|
| 28F008S5 28F016S5 |
16-MBIT 5V FlashFile Memory(16MV闪速存储器)
8-MBIT 5 VOLT FlashFile Memory(8MV闪速存储器) 8兆位5伏FlashFile内存00万位5V的闪速存储器
|
Intel Corp.
Intel, Corp.
|
| 28F160S5 DT28F160S570 |
5 VOLT FlashFile MEMORY
5 V FlashFile Memory(5 V FlashFile 存储
|
Intel Corporation
Intel Corp.
|
| HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262, 144-Word x 16-Bit Dynamic Random Access Memory
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor]
ITT, Corp.
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| MSM514223B |
262,263-Word x 4-Bit Field Memory
262263-Word x 4-Bit Field Memory
From old datasheet system
|
OKI electronic components
OKI[OKI electronic componets]
|
| MSM518221A MSM518221A-25JS MSM518221A-30GS-K MSM51 |
SPECIALTY MEMORY CIRCUIT, PDSO28
262,214-Word x 8-Bit Field Memory
From old datasheet system
|
OKI ELECTRIC INDUSTRY CO LTD
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
|
| TC54256 TC54256AF TC54256AP |
32,768 WORD x 8 BIT CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY
32768 word x 8-bit CMOC one time programmable read only memory, 200ns
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| M5M29KE131BTP |
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY
|
Renesas Electronics Corporation.
|
| M5M29GT320VP-80 M5M29GB320VP-80 M5M29VT320VP M5M29 |
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
RENESAS[Renesas Electronics Corporation]
|
